FDN336P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDN336P
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT P-Channel number of channels:1 500 mW -20 V Continuous Drain Current (ID):-1.3 A 5 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 2.92 mm |
| Width | 1.4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 200 mΩ |
| Height | 940 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | -1.3 A |
| Max Power Dissipation | 500 mW |
| Power Dissipation | 500 mW |
| Threshold Voltage | -900 mV |
| Number of Channels | 1 |
| Input capacitance | 330 pF |
| Continuous Drain Current (ID) | -1.3 A |
| Rds On Max | 200 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| Turn-On Delay Time | 7 ns |
| Turn-Off Delay Time | 16 ns |
| Element Configuration | Single |
| Fall Time | 12 ns |
| Rise Time | 12 ns |
| Dual Supply Voltage | -20 V |
| Gate Charge | 5 nC |
| Drain to Source Resistance | 122 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -900 mV |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541210080 |
| Gate to Source Threshold Voltage | 1.5 V |
| FET Type(Transistor Polarity) | P-Channel |
Stock: 235
Distributors
pcbx
pcbxUnit Price$0.10877
Ext.Price$0.10877
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $0.10877 | $0.10877 |
| 10 | $0.10756 | $1.07560 |
| 50 | $0.10637 | $5.31850 |
| 100 | $0.10537 | $10.53700 |
| 500 | $0.10437 | $52.18500 |